Fabrication and characterization of GaInAsP/InP long wavelength quantum-wire lasers

Author

Arai, Shigehisa

Author_Institution

Res. Centre for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

492

Abstract

1.55 μm wavelength GaInAsP-InP quantum-wire lasers fabricated by two-step OMVPE growth and EBX lithography are characterized and compared with single-quantum-film lasers prepared on the same wafer. A clear anisotropic PL property as well as a blue shift energy corresponding to the wire width was confirmed. Higher differential quantum efficiency with lower threshold current operation (I_th=5.5 mA, J_th=34A/cm² at 90 K) was obtained at temperature region T<170 K

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical testing; photoluminescence; quantum well lasers; semiconductor device testing; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 1.55 mum; 170 K; 90 K; EBX lithography; GaInAsP-InP; GaInAsP-InP long wavelength quantum-wire laser fabrication; blue shift energy; clear anisotropic PL property; differential quantum efficiency; lower threshold current operation; single-quantum-film lasers; temperature region; two-step OMVPE growth; wire width; Anisotropic magnetoresistance; Indium phosphide; Lithography; Optical device fabrication; Optical pulses; Polarization; Quantum well lasers; Temperature dependence; Threshold current; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645534

Filename

645534