Title :
Fabrication and characterization of GaInAsP/InP long wavelength quantum-wire lasers
Author_Institution :
Res. Centre for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
1.55 μm wavelength GaInAsP-InP quantum-wire lasers fabricated by two-step OMVPE growth and EBX lithography are characterized and compared with single-quantum-film lasers prepared on the same wafer. A clear anisotropic PL property as well as a blue shift energy corresponding to the wire width was confirmed. Higher differential quantum efficiency with lower threshold current operation (Ith=5.5 mA, Jth=34A/cm2 at 90 K) was obtained at temperature region T<170 K
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical testing; photoluminescence; quantum well lasers; semiconductor device testing; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 1.55 mum; 170 K; 90 K; EBX lithography; GaInAsP-InP; GaInAsP-InP long wavelength quantum-wire laser fabrication; blue shift energy; clear anisotropic PL property; differential quantum efficiency; lower threshold current operation; single-quantum-film lasers; temperature region; two-step OMVPE growth; wire width; Anisotropic magnetoresistance; Indium phosphide; Lithography; Optical device fabrication; Optical pulses; Polarization; Quantum well lasers; Temperature dependence; Threshold current; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645534
