The design of CMOS transimpedance amplifier based on BSIM large-signal model

Author

Chin-Wei Kuo ; Chao-Chih Hsiao ; Shih-Cheng Yang ; Yi-Jen Chan

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

2001

fDate

20-22 May 2001

Firstpage

165

Lastpage

168

Abstract

A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; high-speed integrated circuits; integrated circuit modelling; integrated optoelectronics; optical fibre communication; optical receivers; 0.35 micron; BSIM large-signal model; BSIM3v3; CMOS technology; CMOS transimpedance amplifier; bandwidth; capacitive-peaking design; circuit realization; microwave behavior; optical communication; passive components; CMOS technology; Integrated circuit technology; MOSFETs; Optical amplifiers; Optical fiber communication; Optical receivers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935667

Filename

935667