Title :
Transient-field characterization of reverse recovery behavior of diode with interconnection
Author :
Dongyan, Wdng ; Linchang, Zhang ; Kesheng, Zhou
Author_Institution :
Dept. of Telecommun. & Control Eng., Northern Jiaotong Univ., Beijing, China
Abstract :
A novel time domain analytical method based on the TLM for predicting transient fields of loop circuits during the reverse recovery period of a diode is presented. It enables the exact calculation of both the far and near field distributions for the transient process, which is necessary to verify the correct operation of the control unit in the power electronics converters. Retardation has to be taken into account in the calculation to ensure exact results. The computed results show good agreement with the measured ones
Keywords :
electromagnetic compatibility; electromagnetic interference; power convertors; power semiconductor diodes; time-domain analysis; transient analysis; transmission line theory; control unit; diode; far field distributions; interconnection; loop circuits; near field distributions; power electronics converters; reverse recovery behavior; time domain analytical method; transient-field characterization; Diodes; Electromagnetic fields; Electromagnetic interference; Electromagnetic measurements; Electromagnetic transients; Integrated circuit interconnections; Power electronics; Power system transients; Time domain analysis; Transient analysis;
Conference_Titel :
Electromagnetic Compatibility, 1999 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
4-9980748-4-9
DOI :
10.1109/ELMAGC.1999.801407
