Title :
Terahertz Raman laser based on silicon doped by phosphorus
Author :
Hübers, Heinz-Wilhelm ; Pavlov, Sergey G. ; Böttger, Ute ; Zhukavin, Roman Kh ; Shastin, Valery N. ; Hovenier, Niels ; Redlich, Britta ; Abrosimov, Nikolai ; Riemann, Helge
Author_Institution :
Inst. of Planetary Res., German Aerosp. Center, Berlin
Abstract :
Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The Stokes shift of 3.16 THz is equal to the difference between the energies of the phosphorus ground state, 1s(A1), and the 1s(E) split off state.
Keywords :
Raman lasers; elemental semiconductors; ground states; optical pumping; phosphorus; semiconductor doping; semiconductor lasers; silicon; spectral line shift; stimulated emission; Raman-type stimulated emission; Si:P; Stokes shift; frequency 5.0 THz to 5.2 THz; frequency-tunable infrared free electron laser; ground state; optical excitation; silicon crystal doped phosphorus; terahertz Raman laser; Free electron lasers; Frequency; Laser excitation; Laser transitions; Optical pumping; Optical scattering; Pump lasers; Raman scattering; Silicon; Stimulated emission;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665422
