• DocumentCode
    327263
  • Title

    Low-power embedded SRAM macros with current-mode read/write operations

  • Author

    Wang, Jinn-Shyan ; Yang, Po-Hui ; Tseng, Wayne

  • Author_Institution
    Dept. of Electr. Eng., Chung-Cheng Univ., Chia-Yi, Taiwan
  • fYear
    1998
  • fDate
    10-12 Aug. 1998
  • Firstpage
    282
  • Lastpage
    287
  • Abstract
    The newly proposed SRAM performs both read and write operations in the current-mode. Due to the current-mode operations, voltage swings at bit-lines and data-lines are kept very small during read and write. The AC power dissipation of bit-lines and data-lines can thus be saved efficiently. For an embedded SRAM macro used in an 8-bit microcontroller, the SRAM using the fully current-mode technique consumes only 30% power dissipation as compared to the SRAM with only current-mode read operation. Experimental results show good agreement with the simulation results and prove the feasibility of the new technique.
  • Keywords
    CMOS memory circuits; SRAM chips; low-power electronics; microcontrollers; 8 bit; AC power dissipation; bit-lines; current-mode read/write operations; data-lines; low-power embedded SRAM macros; memory cell design; microcontroller; static RAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1998. Proceedings. 1998 International Symposium on
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-58113-059-7
  • Type

    conf

  • Filename
    708203