Title :
Small-signal modulation characteristics of self-organized quantum dot separate confinement heterostructure and tunneling injection lasers
Author :
Kamath, K. ; Klotzkin, D. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We have characterized the dynamic properties of single- and multi-dot layer (to enhance the confinement factor) single mode self-assembled InGaAs-GaAs quantum dot lasers at room temperature. In particular, we have investigated tunneling injection of electrons in quantum dot lasers, as a means to overcome the carrier relaxation bottleneck, for the first time
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; laser modes; quantum well lasers; semiconductor quantum dots; tunnelling; InGaAs-GaAs; carrier relaxation bottleneck; confinement factor; dynamic properties; multi-dot layer lasers; quantum dot lasers; room temperature; self-organized quantum dot separate confinement heterostructure injection lasers; single mode self-assembled InGaAs-GaAs quantum dot lasers; single-dot layer lasers; small-signal modulation characteristics; tunneling injection; tunneling injection lasers; Bandwidth; Gallium arsenide; Laser modes; Masers; Potential well; Quantum dot lasers; Quantum dots; Temperature; Tunneling; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645537
