DocumentCode :
3272660
Title :
A New CMOS Current Reference with High Order Temperature Compensation
Author :
Hao, Zhou ; Bo, Zhang ; Zhao-Ji, Li ; Ping, Luo
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
Volume :
4
fYear :
2006
fDate :
25-28 June 2006
Firstpage :
2189
Lastpage :
2192
Abstract :
A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 mum standard CMOS technology, gives a good temperature coefficient of 31 ppm/degC [-50~100degC] at a 1.8 V supply, and also achieves line regulation of 0.01%/V and -120 dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and line regulation
Keywords :
CMOS integrated circuits; MOSFET; compensation; reference circuits; CMOS current reference; MOS transistors; high order temperature compensation; integrated-circuit resistors; CMOS technology; Channel bank filters; Circuit stability; Integrated circuit technology; MOSFETs; Photonic band gap; Resistors; Silicon; Temperature dependence; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location :
Guilin
Print_ISBN :
0-7803-9584-0
Electronic_ISBN :
0-7803-9585-9
Type :
conf
DOI :
10.1109/ICCCAS.2006.285111
Filename :
4064358
Link To Document :
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