Title :
Relaxation oscillation frequency of self-organized stacked quantum dot lasers at room temperature
Author :
Mao, M.-H. ; Heinrichsdorff, F. ; Kirstaedter, N. ; Krost, A. ; Ledentsov, N.N. ; Bimberg, D. ; Ustinov, V.M. ; Egorov, A.Y. ; Zhukov, A.E. ; Kop, P.S. ; Alferov, Z.I.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Here, shallow mesa stripe lasers with 265 μm cavity length and 6 μm mesa width (MOCVD sample) or 550 μm cavity length and 8 μm mesa width (MBE sample) are used for the resonance frequency measurement. With such a short cavity for a MOCVD sample, the emission stems from the excited states. The threshold current is 21.8 mA and the external quantum efficiency is 55.6 percent. We give the photoluminescent spectrum of our quantum dot laser
Keywords :
current density; laser cavity resonators; optical testing; photoluminescence; quantum well lasers; self-adjusting systems; semiconductor device testing; semiconductor quantum dots; 21.8 mA; 265 mum; 55.6 percent; 550 mum; 6 mum; 8 mum; MBE sample; MOCVD sample; cavity length; excited states; mesa width; photoluminescent spectrum; relaxation oscillation frequency; resonance frequency measurement; room temperature; self-organized stacked quantum dot lasers; shallow mesa stripe lasers; threshold current; Frequency; Gallium arsenide; Laser beam cutting; MOCVD; Quantum dot lasers; Quantum mechanics; Resonance; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645538
