A CMOS focal-plane array for terahertz imaging

Author

Pfeiffer, Ullrich R. ; Öjefor, E. ; Lisauskas, A. ; Glaab, D. ; Voltolina, F. ; Nzogang, V. M Fonkwe ; Bolívar, P. Haring ; Roskos, H.G.

Author_Institution

High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

3

Abstract

A terahertz focal-plane array (FPA) for video-rate imaging applications has been fabricated in a commercially available CMOS process technology. The 3times5 pixel array uses conventional low-cost quarter-micron NMOS transistors for incoherent power detection. Each pixel has a size of 150times150 mum² and consists of an on-chip antenna, an incoherent power detection circuit, and a 43-dB amplifier with a 1.6-MHz bandwidth. At 0.6 THz a pixel achieves a responsivity of 50 kV/W with a minimum NEP of 400 pW/radic(Hz). Images at 0.6 THz are presented which demonstrate the feasibility of the applied method and show the potential of silicon integrate terahertz FPAs for future low-cost terahertz camera systems.

Keywords

CMOS image sensors; focal planes; submillimetre wave imaging; CMOS focal-plane array; amplifier; frequency 0.6 THz; incoherent power detection; on-chip antenna; quarter-micron NMOS transistors; silicon; terahertz imaging; video-rate imaging applications; Bandwidth; CMOS process; CMOS technology; Cameras; Circuits; MOSFETs; Optical imaging; Power amplifiers; Silicon; Submillimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665429

Filename

4665429