DocumentCode :
3272731
Title :
A CMOS focal-plane array for terahertz imaging
Author :
Pfeiffer, Ullrich R. ; Öjefor, E. ; Lisauskas, A. ; Glaab, D. ; Voltolina, F. ; Nzogang, V. M Fonkwe ; Bolívar, P. Haring ; Roskos, H.G.
Author_Institution :
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
3
Abstract :
A terahertz focal-plane array (FPA) for video-rate imaging applications has been fabricated in a commercially available CMOS process technology. The 3times5 pixel array uses conventional low-cost quarter-micron NMOS transistors for incoherent power detection. Each pixel has a size of 150times150 mum2 and consists of an on-chip antenna, an incoherent power detection circuit, and a 43-dB amplifier with a 1.6-MHz bandwidth. At 0.6 THz a pixel achieves a responsivity of 50 kV/W with a minimum NEP of 400 pW/radic(Hz). Images at 0.6 THz are presented which demonstrate the feasibility of the applied method and show the potential of silicon integrate terahertz FPAs for future low-cost terahertz camera systems.
Keywords :
CMOS image sensors; focal planes; submillimetre wave imaging; CMOS focal-plane array; amplifier; frequency 0.6 THz; incoherent power detection; on-chip antenna; quarter-micron NMOS transistors; silicon; terahertz imaging; video-rate imaging applications; Bandwidth; CMOS process; CMOS technology; Cameras; Circuits; MOSFETs; Optical imaging; Power amplifiers; Silicon; Submillimeter wave technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665429
Filename :
4665429
Link To Document :
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