Title :
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs
Author :
Spessot, Alessio ; Ritzenthaler, Romain ; Schram, Tom ; Aoulaiche, Marc ; Cho, Moonju ; Luque, Maria Toledano ; Horiguchi, Naoto ; Fazan, Pierre
Author_Institution :
Micron Technol. Belgium, Leuven, Belgium
Abstract :
We have evaluated the impact on the reliability of an innovative process flow, specifically designed for peripheral MOSFETs of DRAM memories. Al and MgO layers are deposited, diffused into the gate stacks of NMOS and PMOS and finally removed. We have demonstrated an anomalous yet predictable PBTI behavior, coupled with a more standard NBTI one. Decent lifetime is achieved for both gate stacks, demonstrating the feasibility of the proposed process flow concerning BTI.
Keywords :
DRAM chips; MOSFET circuits; aluminium; magnesium compounds; negative bias temperature instability; reliability; semiconductor doping; Al; DRAM memories; MgO; NBTI; NMOS; PBTI behavior; PMOS; doping techniques; gate stacks; negative bias temperature instability; peripheral MOSFET; positive bias temperature instability; reliability impact; Aluminum oxide; Fitting; Logic gates; MOS devices; Random access memory; Stress; HKMG; MOSFET; NBTI; PBTI;
Conference_Titel :
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location :
Leuven
DOI :
10.1109/ICICDT.2015.7165890
