DocumentCode
3272762
Title
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs
Author
Spessot, Alessio ; Ritzenthaler, Romain ; Schram, Tom ; Aoulaiche, Marc ; Cho, Moonju ; Luque, Maria Toledano ; Horiguchi, Naoto ; Fazan, Pierre
Author_Institution
Micron Technol. Belgium, Leuven, Belgium
fYear
2015
fDate
1-3 June 2015
Firstpage
1
Lastpage
4
Abstract
We have evaluated the impact on the reliability of an innovative process flow, specifically designed for peripheral MOSFETs of DRAM memories. Al and MgO layers are deposited, diffused into the gate stacks of NMOS and PMOS and finally removed. We have demonstrated an anomalous yet predictable PBTI behavior, coupled with a more standard NBTI one. Decent lifetime is achieved for both gate stacks, demonstrating the feasibility of the proposed process flow concerning BTI.
Keywords
DRAM chips; MOSFET circuits; aluminium; magnesium compounds; negative bias temperature instability; reliability; semiconductor doping; Al; DRAM memories; MgO; NBTI; NMOS; PBTI behavior; PMOS; doping techniques; gate stacks; negative bias temperature instability; peripheral MOSFET; positive bias temperature instability; reliability impact; Aluminum oxide; Fitting; Logic gates; MOS devices; Random access memory; Stress; HKMG; MOSFET; NBTI; PBTI;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location
Leuven
Type
conf
DOI
10.1109/ICICDT.2015.7165890
Filename
7165890
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