Title :
A monolithic Si PCS-CDMA power amplifier with an impedance-controllable biasing scheme
Author :
Sifen Luo ; Sowlati, T.
Author_Institution :
Philips Res., New York, NY, USA
Abstract :
This paper for the first time presents a monolithic Si PCS-CDMA power amplifier (PA) capable of delivering 28.2 dBm output power with 30% power-added efficiency (PAE) and -45 dBc adjacent-channel-power ratio (ACPR) at 1.9 GHz and 3.6 V supply voltage. The PA implemented in a 30 GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control class of operation and bias impedance of the output stage.
Keywords :
BiCMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; code division multiple access; elemental semiconductors; personal communication networks; silicon; 1.9 GHz; 3.6 V; 30 GHz; 30 percent; BiCMOS process; PCS-CDMA power amplifier; Si; adjacent-channel-power ratio; bias impedance; impedance-controllable biasing scheme; power-added efficiency; Capacitors; Circuits; Impedance matching; Inductors; Multiaccess communication; Power amplifiers; Power generation; Radio frequency; Telephone sets; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935679
