• DocumentCode
    3272885
  • Title

    Tunable broadband frequency-multiplied terahertz sources

  • Author

    Ward, John S. ; Chattopadhyay, Goutam ; Gill, John ; Javadi, Hamid ; Lee, Choonsup ; Lin, Robert ; Maestrini, Alain ; Maiwald, Frank ; Mehdi, Imran ; Schlecht, Erich ; Siegel, Peter

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Continued advances in Schottky diode frequency multiplier technology enable solid-state submillimeter-wave and terahertz sources with higher output power tunable over broader bandwidths than have been previously demonstrated. For example, 630 muW of continuous-wave power were measured at 900 GHz at room temperature and 1.4 mW at 920 GHz from the same frequency multiplier chain when cooled to 77 K. The 3 dB bandwidth of this chain is about 100 GHz. Simulations predict that an additional tripler driven by this new 900 GHz tripler chip could produce 1 to 2 muW at 2.7 THz when operated at 77 K, which is sufficient to pump a superconducting heterodyne mixer. We present these recent results as well as summarize the current state-of-the-art of JPL frequency multiplied sources. Finally, we review the limitations of our current generation of frequency multipliers to predict that future advances in amplifier and diode technology should enable at least a ten-fold increase in available tunable output power from solid state frequency-multiplied sources.
  • Keywords
    frequency multipliers; submillimetre wave devices; Schottky diode frequency multiplier technology; continuous-wave power; frequency 900 GHz; frequency 920 GHz; power 1.4 mW; power 630 muW; solid-state submillimeter-wave sources; temperature 293 K to 298 K; temperature 77 K; terahertz sources; tunable broadband frequency multiplier; Bandwidth; Frequency measurement; Power amplifiers; Power generation; Power measurement; Schottky diodes; Semiconductor device measurement; Solid state circuits; Submillimeter wave technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665437
  • Filename
    4665437