Design and performance of a highly integrated wideband active downconverter MMIC

Author

Campbell, C.F. ; Beall, J.M.

Author_Institution

TriQuint Semicond., Richardson, TX, USA

fYear

2001

fDate

20-22 May 2001

Firstpage

245

Lastpage

248

Abstract

The design and performance of a highly integrated wideband downconverter MMIC is described. The circuit utilizes 0.25 /spl mu/m pHEMT technology and a high density interconnect (HDI) process to yield a single ended, double balanced active downconverter with a 1 mm/sup 2/ die area. The circuit is self biased and draws 17-24 mA from a single 3-5 V positive supply. Diode level shifting is employed to achieve a direct coupled IF output. Measured performance of the MMIC demonstrates 10 GHz 3 dB-RF bandwidth and positive conversion gain through 18 GHz.

Keywords

HEMT integrated circuits; MMIC frequency convertors; field effect MMIC; integrated circuit interconnections; low-power electronics; power combiners; 0.25 micron; 10 GHz; 17 to 24 mA; 18 GHz; 3 dB-RF bandwidth; 3 to 5 V; diode level shifting; direct coupled IF output; double balanced active downconverter; high density interconnect; pHEMT technology; positive conversion gain; wideband active downconverter MMIC; Bandwidth; Coupling circuits; Diodes; Gain measurement; Integrated circuit interconnections; Integrated circuit technology; Integrated circuit yield; MMICs; PHEMTs; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935685

Filename

935685