A 2.5 GHz low noise high linearity LNA/mixer IC in SiGe BiCMOS technology

Author

Wang, D. ; Krishnamurthi, K. ; Gibson, S. ; Brunt, J.

Author_Institution

Boston Design Center, IBM Microelectron., Lowell, MA, USA

fYear

2001

fDate

20-22 May 2001

Firstpage

249

Lastpage

252

Abstract

A monolithic low noise high linearity LNA/mixer circuit for 2.5 GHz applications has been fabricated in IBM 47 GHz SiGe production process. The measured performance is 8 dBm input IP3, 1.6 dB NF and 12 dB Gain for a low noise amplifier (LNA), and 2.5 dBm input IP3, 7.5 dB NF and 14 dB gain for a downconversion mixer with a total current consumption of 26 mA for a 2.75 V supply. LNA matching, mixer RF and LO matching and two baluns are all integrated on chip, requiring no critical RF tuning components.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; baluns; cellular radio; code division multiple access; semiconductor materials; 1.6 dB; 12 dB; 14 dB; 2.5 GHz; 2.75 V; 26 mA; 47 GHz; 7.5 dB; BiCMOS technology; IBM; IP3; LNA/mixer IC; LO matching; SiGe; baluns; downconversion mixer; linearity; low noise amplifier; total current consumption; BiCMOS integrated circuits; Current measurement; Germanium silicon alloys; Integrated circuit noise; Linearity; Noise measurement; Performance gain; Production; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935686

Filename

935686