A low-power direct conversion receiver module for C-band wireless applications

Author

Matinpour, B. ; Sutono, A. ; Laskar, J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2001

fDate

20-22 May 2001

Firstpage

263

Lastpage

266

Abstract

In this paper, we present the first low-power direct conversion receiver module for broadband wireless applications at C-band. This module is composed of a highly-integrated receiver MMIC fabricated in a 0.6 /spl mu/m commercial GaAs MESFET process mounted on a LTCC substrate with an integrated multi-layer three-dimensional front-end filter. With only 25 mW of dc power consumption, this receiver module demonstrates a conversion gain of 9 dB, NF of 4.7 dB, dc offset below -70 dBm, IIP2 of +30 dBm, and IIP3 of -10 dBm at 5.8 GHz.

Keywords

III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; low-power electronics; microwave receivers; 0.6 micron; 25 mW; 4.7 dB; 5.8 GHz; 9 dB; DC offset; GaAs; GaAs MESFET MMIC; IIP2; IIP3; LTCC substrate; broadband C-band wireless communication; conversion gain; integrated multilayer three-dimensional front-end filter; low-power direct conversion receiver module; noise figure; Band pass filters; Ceramics; Gallium arsenide; Image converters; MMICs; Microelectronics; Microwave filters; Stripline; Substrates; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935689

Filename

935689