Title :
A GaAs HBT 5.8 GHz OFDM transmitter MMIC chip set
Author :
Raghavan, A. ; Gebara, E. ; Lee, C.-H. ; Chakraborty, S. ; Mukherjee, D. ; Bhattacharjee, J. ; Heo, D. ; Laskar, J.
Author_Institution :
Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents a GaAs/AlGaAs HBT transmitter MMIC chip set consisting of a power amplifier, a mixer and a voltage-controlled oscillator (VCO) for 5.8 GHz OFDM applications. The performance of the transmitter in an OFDM system is investigated by means of envelope co-simulation of the circuit in an OFDM transmitter simulation platform that conforms to the IEEE 802.11a wireless LAN standard. To the best of our knowledge, this research represents the first reported implementation of an OFDM transmitter in GaAs HBT technology.
Keywords :
III-V semiconductors; OFDM modulation; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; radio transmitters; 5.8 GHz; GaAs-AlGaAs; GaAs/AlGaAs HBT MMIC chip set; IEEE 802.11a wireless LAN standard; OFDM transmitter; envelope co-simulation; mixer; power amplifier; voltage controlled oscillator; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Inductors; Linearity; MMICs; OFDM; Power amplifiers; Transmitters; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935690
