DocumentCode :
3272975
Title :
A Novel Technique for Improving the Linearity of MOS Sampling Switch
Author :
Peng, Yunfeng ; Yan, Wei ; Kong, Derui ; Zhou, Feng
Author_Institution :
ASIC & Syst. of State´´s Key Lab., Fudan Univ., Shanghai
Volume :
4
fYear :
2006
fDate :
25-28 June 2006
Firstpage :
2268
Lastpage :
2272
Abstract :
A novel technique is proposed to improve the linearity of the MOS sampling switch (SW) by generating a replica transistor with the same threshold voltage as the sampling transistor. And it is obtained by forcing the replica transistor to operate in the triode region with the help of resistive voltage divider. The circuit has been implemented in chartered 0.35 mum standard CMOS technology. The proposed switch achieves a spurious free dynamic range (SFDR) of 110 dB for a 30 MHz, 1 Vp-p input signal, sampled at a rate of 80 MS/s, about 10 dB over the conventional switch, and the on-resistance variation is reduced by 90%
Keywords :
CMOS integrated circuits; VHF devices; triodes; voltage dividers; 0.35 micron; 1 V; 30 MHz; MOS SW linearity; SFDR; chartered 0.35 mum standard CMOS technology; replica transistor; resistive voltage divider; sampling switch; spurious free dynamic range; triode region; Application specific integrated circuits; CMOS technology; Dynamic range; Linearity; MOS devices; MOSFETs; Sampling methods; Switches; Switching circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location :
Guilin
Print_ISBN :
0-7803-9584-0
Electronic_ISBN :
0-7803-9585-9
Type :
conf
DOI :
10.1109/ICCCAS.2006.285130
Filename :
4064377
Link To Document :
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