DocumentCode :
3273013
Title :
Comparative analysis on DRIE and LIGA fabrications for millimeter-wave backward-wave oscillators
Author :
Baik, C.W. ; So, J.K. ; Sattorov, M.A. ; Srivastava, A. ; Jang, K.H. ; Won, J.H. ; Son, Y.M. ; Kim, S.I. ; Kim, J.M. ; Kim, J.H. ; Chang, S.S. ; Park, G.S.
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
For the generation of millimeter wave from vacuum electron devices, the microfabrication of an interaction circuit is one of the key factors. Two different technologies, a deep etch X-ray lithography (x-ray LIGA) and a deep reactive ion etching (DRIE), were employed for the comparative study and the realization of a backward-wave oscillator. Both methods showed accurate and reliable results, which enabled the integration of the interaction circuit for millimeter-wave backward-wave oscillators.
Keywords :
X-ray lithography; backward wave oscillators; microfabrication; millimetre wave oscillators; sputter etching; vacuum microelectronics; DRIE; LIGA; deep etch X-ray lithography; deep reactive ion etching; microfabrication; millimeter-wave backward-wave oscillators; vacuum electron devices; Circuits; Etching; Fabrication; Frequency; Microwave oscillators; Millimeter wave technology; Rough surfaces; Silicon; Submillimeter wave technology; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665443
Filename :
4665443
Link To Document :
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