Far-end crosstalk waveform for CMOS-IC and diode loads

Author

Mariko, Ken ; Matsumoto, Fujihiko ; Noguchi, Yasuaki

Author_Institution

Dept. of Appl. Phys., Nat. Defense Acad., Yokosuka, Japan

fYear

1999

fDate

1999

Firstpage

738

Lastpage

741

Abstract

Crosstalk noise, which leads malfunction in data transmission equipment, is one of the most important problems to be solved. In this study, a CMOS-IC, a silicon diode, and a variable capacitance diode are used as nonlinear loads of microstrip lines. The waveform of the far-end crosstalk is measured and analyzed using a 4-port network model in the time domain. It is shown that the C-V characteristics of the diodes influence the waveform of the crosstalk, and that it is valid to calculate the waveform considering the capacitance of the loads to be fixed if the dependence of the capacitance upon the voltage is small

Keywords

CMOS integrated circuits; crosstalk; data communication equipment; digital communication; electromagnetic compatibility; microstrip lines; multiport networks; semiconductor diodes; 4-port network model; C-V characteristics; CMOS-IC load; EMC; EMI; data transmission equipment malfunction; digital communication; diode load; electromagnetic compatibility; far-end crosstalk waveform; far-end crosstalk waveform measurement; microstrip lines; nonlinear loads; time domain; variable capacitance diode; Capacitance; Capacitance-voltage characteristics; Crosstalk; Data communication; Diodes; Microstrip; Silicon; Time domain analysis; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 1999 International Symposium on

Conference_Location

Tokyo

Print_ISBN

4-9980748-4-9

Type

conf

DOI

10.1109/ELMAGC.1999.801434

Filename

801434