DocumentCode
3273121
Title
Monolithic integration of InGaAs-GaAs MQW DBR lasers with external cavity electroabsorption modulators
Author
Lammert, R.M.
Author_Institution
Lab. of Microelectron., Illinois Univ., Urbana, IL, USA
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
521
Abstract
In this paper, InGaAs-GaAs MQW DBR lasers with monolithically integrated external cavity electroabsorption modulators fabricated using selective-area metalorganic chemical vapor deposition (MOCVD), and also fabricated using uniform material will be discussed
Keywords
CVD coatings; III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical fabrication; quantum well lasers; InGaAs-GaAs; InGaAs-GaAs MQW DBR laser; external cavity electroabsorption modulator; fabrication; metalorganic chemical vapor deposition; monolithic integration; selective area epitaxy; Chemical lasers; Distributed Bragg reflectors; Epitaxial growth; Etching; Gallium arsenide; Gratings; Monolithic integrated circuits; Optical device fabrication; Power generation; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645549
Filename
645549
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