• DocumentCode
    3273160
  • Title

    Implementation of a simulation-based short-term lot arrival forecast in a mature 200mm semiconductor FAB

  • Author

    Scholl, Wolfgang ; Gan, Boon Ping ; Lendermann, Peter ; Noack, Daniel ; Rose, Oliver ; Preuss, Patrick ; Pappert, Falk Stefan

  • Author_Institution
    Infineon Technol. Dresden, Dresden, Germany
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    1927
  • Lastpage
    1938
  • Abstract
    The ability to perform lot arrival forecast at work center level is a key requirement for pro-active FAB operation management. Visibility to this information enables preemptive resource allocation and bottleneck management. Today, the work center lot arrival forecast is achieved through the use of short term simulation technique in Infineon Dresden. High fidelity simulation model that includes detailed modeling feature such as attribute-based sampling procedure, dedication and temporary tool blocking is built automatically through the transformation of data queries from data sources. In this paper, we present the results of our model validation work, comparing the FAB and forecasted lot arrival of the defect density measurement work center. Due to the high capacity demand of automotive product that requires more than 20 inspection steps; engineering lots and preventive maintenance of DDM must be scheduled at the right time. This can only be achieved with high quality lot arrival forecast.
  • Keywords
    automotive components; inspection; preventive maintenance; production engineering computing; production management; technological forecasting; D-SIMForecaster; DDM; WIP; attribute-based sampling procedure; automotive product; high fidelity simulation model; inspection; preemptive resource allocation; preventive maintenance; pro-active FAB operation management; semiconductor FAB; short term simulation technique; simulation-based short-term lot arrival forecast; Data models; Databases; Engines; Load modeling; Predictive models; Production; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation Conference (WSC), Proceedings of the 2011 Winter
  • Conference_Location
    Phoenix, AZ
  • ISSN
    0891-7736
  • Print_ISBN
    978-1-4577-2108-3
  • Electronic_ISBN
    0891-7736
  • Type

    conf

  • DOI
    10.1109/WSC.2011.6147907
  • Filename
    6147907