A Sub-1-V Low-Voltage Low-Power Voltage Referencewith a Back-Gate Connection MOSFET

Author

Pan, Jun ; Inoue, Yasuaki

Author_Institution

Graduate Sch. of Inf., Production & Syst., Waseda Univ., Tokyo

Volume

4

fYear

2006

fDate

25-28 June 2006

Firstpage

2314

Lastpage

2318

Abstract

A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 muW, respectively. The temperature coefficient of the reference voltage is 33 ppm/degC within a temperature range from -40 to 100 degC. The supply voltage dependence is -0.36 mV/V (Vdd=0.95~3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 mum technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively

Keywords

CMOS analogue integrated circuits; MOSFET circuits; SPICE; low-power electronics; reference circuits; -0.65 V; -40 to 100 degC; 0.35 micron; 1 V; 1.1 muW; 181 mV; Hspice simulation; back-gate connection MOSFET; metal-oxide-semiconductor field effect transistor; micropower electronic application; n-channel MOSFET; p-channel MOSFET; self-biased low-voltage low-power voltage reference; standard CMOS technology; total power dissipation; CMOS technology; Circuit simulation; MOSFET circuits; Photonic band gap; Power dissipation; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems Proceedings, 2006 International Conference on

Conference_Location

Guilin

Print_ISBN

0-7803-9584-0

Electronic_ISBN

0-7803-9585-9

Type

conf

DOI

10.1109/ICCCAS.2006.285140

Filename

4064387