DocumentCode :
3273256
Title :
THz Emission from transient electrical currents injected into semiconductors via optical quantum interference
Author :
Betz, M. ; Ménard, J-M ; Sames, C. ; Costa, L. ; Spasenovic, M. ; Bristow, A.D. ; van Driel, H.M.
Author_Institution :
Dept. of Phys., Univ. of Toronto, Toronto, ON
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
1
Abstract :
Quantum interference between single and two photon inter-band absorption processes can lead to injection of electrical currents in direct and indirect band gap semiconductors. When the optical excitation occurs through 100 fs optical pulses the transient electrical currents emit THz radiation that can be used as a probe of the ultrafast current dynamics.
Keywords :
photoexcitation; quantum interference phenomena; semiconductor materials; submillimetre wave spectra; transients; THz emission; direct band gap semiconductors; indirect band gap semiconductors; optical excitation; optical quantum interference; photon inter-band absorption; transient electrical currents; Absorption; Interference; Optical beams; Optical control; Optical polarization; Optical pulses; Photonic band gap; Probes; Stimulated emission; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665456
Filename :
4665456
Link To Document :
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