DocumentCode :
3273295
Title :
Implementing Virtual Metrology into semiconductor production processes - an investment assessment
Author :
Koitzsch, Matthias ; Merhof, Jochen ; Michl, Markus ; Noll, Humbert ; Nemecek, Alexander ; Honold, Alfred ; Kleineidam, Gerhard ; Lebrecht, Holger
Author_Institution :
Fraunhofer IISB, Erlangen, Germany
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
2017
Lastpage :
2028
Abstract :
Continuously increasing complexity of semiconductor manufacturing processes drives the need for wafer to wafer and even within wafer control loops metrology. Applying Virtual Metrology (VM) techniques is one promising approach to reduce the time between process, measurement and corrective actions. Prior to implementation - besides technical aspects like testing - the investment into VM has to be assessed and justified on the basis of reliable and reasonable data. This paper presents the investment assessment for implementing VM algorithms into plasma etcher tools of a model semiconductor fabrication line. Core of the investment calculation is a spreadsheet-based calculation which allows for a results per quarter evaluation. A Discrete Event Simulation (DES) model was developed to produce relevant input data for the spreadsheet calculation. Potential risks - e.g., delivery of wrong VM results - due to the implementation of VM have been identified and evaluated using the standardized method of Failure Mode and Effects Analysis (FMEA).
Keywords :
discrete event simulation; etching; failure analysis; investment; production engineering computing; production equipment; semiconductor device manufacture; DES model; FMEA; VM algorithms; discrete event simulation; failure mode and effects analysis; integrated device manufacturers; investment assessment; plasma etcher tools; semiconductor fabrication line; semiconductor production processes; virtual metrology; wafer control loops metrology; Discrete event simulation; Investments; Metrology; Production facilities; Semiconductor device modeling; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation Conference (WSC), Proceedings of the 2011 Winter
Conference_Location :
Phoenix, AZ
ISSN :
0891-7736
Print_ISBN :
978-1-4577-2108-3
Electronic_ISBN :
0891-7736
Type :
conf
DOI :
10.1109/WSC.2011.6147915
Filename :
6147915
Link To Document :
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