DocumentCode :
3273299
Title :
Benefits of decomposing wide CMOS transistors into minimum-size gates
Author :
Berge, Hans Kristian Otnes ; Aunet, Snorre
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo, Norway
fYear :
2009
fDate :
16-17 Nov. 2009
Firstpage :
1
Lastpage :
4
Abstract :
In this paper we show how decomposition of a wide CMOS transistor into a multi-finger FET with gates of minimum size can be beneficial for the reduction of delay and power-delay products in logic gates. This design possibility, which we call a minimum-split transistor (MST), seems to be largely overlooked in the literature. In a 90 nm CMOS process we compare the design to wide transistors. By exploiting the narrow-width effect, reduced parasitic capacitances from a shorter active channel and increased gate-drain spacing, we achieve up to 75-85% higher operation speed at a similar or reduced power consumption. The worst-case timing delay is reduced by 35-40% along with the nominal values. The design technique is considered valuable, in particular for critical time paths. The paper takes the perspective of subthreshold logic design at 200 mV, but the technique is also useful above threshold. A statistical experiment also investigates how Vth variation in MSTs changes with the number of parallell gates.
Keywords :
CMOS logic circuits; field effect transistors; logic design; logic gates; CMOS transistor; gate-drain spacing; logic gates; minimum-size gates; minimum-split transistor; multifinger FET; parasitic capacitance; size 90 nm; CMOS logic circuits; CMOS process; Capacitance; Delay; Energy consumption; Implants; Informatics; Logic design; Ring oscillators; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2009
Conference_Location :
Trondheim
Print_ISBN :
978-1-4244-4310-9
Electronic_ISBN :
978-1-4244-4311-6
Type :
conf
DOI :
10.1109/NORCHP.2009.5397795
Filename :
5397795
Link To Document :
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