Title :
A 65-nm CMOS ultra-low-power LC quadrature VCO
Author :
Lee, Kin Keung ; Bryant, Carl ; Törmänen, Markus ; Sjöland, Henrik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
An ultra-low-power LC quadrature VCO (QVCO) is presented. It is designed in a single-poly seven-metal 65 nm CMOS process. To minimize power dissipation an inductor with a high LQ product of 188 nH at 2.4 GHz, and a self-resonant frequency (fo) of 3.8 GHz, was designed. According to SpectreRF simulations the power dissipation is below 250 ¿W at a 0.6V supply. At this supply the simulated tuning range and phase noise at 1 MHz offset are 10.4% (2.34-2.59 GHz) and -113.4 dBc/Hz respectively. The phase noise figure of merit (FoM) is better than 187 dB at all supply voltages of interest, which is competitive to other state-of-the-art QVCOs.
Keywords :
CMOS analogue integrated circuits; UHF oscillators; circuit tuning; inductors; low-power electronics; phase noise; voltage-controlled oscillators; CMOS process; CMOS ultralow-power LC quadrature VCO; SpectreRF simulations; figure of merit; frequency 2.34 GHz to 2.59 GHz; frequency 2.4 GHz; frequency 3.8 GHz; inductor; phase noise; power dissipation; self-resonant frequency; simulated tuning range; size 65 nm; supply voltages; voltage 0.6 V; CMOS process; Energy consumption; Frequency; Inductors; Phase noise; Power dissipation; Receivers; Ring oscillators; Tuning; Voltage-controlled oscillators;
Conference_Titel :
NORCHIP, 2009
Conference_Location :
Trondheim
Print_ISBN :
978-1-4244-4310-9
Electronic_ISBN :
978-1-4244-4311-6
DOI :
10.1109/NORCHP.2009.5397805