Title :
Spectroscopy of THz radiation induced by impact ionization of shallow acceptors in Ge
Author :
Andrianov, A.V. ; Zakharin, A.O. ; Zinovev, N.N.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg
Abstract :
We report results of spectroscopic studies of terahertz (THz) spontaneous emission at conditions of electrical breakdown of impurity centers in Ge(Ga) with Na-Nd~ 1.6x1014 cm-3. The samples were deformation-free or subjected to compressive strain along [111] axis. The experiments were performed at T~5 K with using a step-scan Fourier spectrometer. The maximum level of the compressive strain was 3 kbar.
Keywords :
Fourier transform spectra; compressive strength; electric breakdown; elemental semiconductors; gallium; germanium; impact ionisation; impurity states; spontaneous emission; terahertz wave spectra; Ge:Ga; compressive strain; electrical breakdown; impact ionization; impurity centers; shallow acceptors; step-scan Fourier spectrometer; terahertz spontaneous emission; Biomedical optical imaging; Crystals; Electric breakdown; Electroluminescence; Impact ionization; Impurities; Ionizing radiation; Polarization; Spectroscopy; Stimulated emission;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665469
