• DocumentCode
    3273630
  • Title

    Scaling Non-Volatile Memory Below 30nm

  • Author

    Prall, Kirk

  • Author_Institution
    Micron Technol. Inc., Boise
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    5
  • Lastpage
    10
  • Abstract
    The future scaling challenges of non-volatile memories for 32 Gb+ using 30 nm and below feature sizes are discussed. The key challenges reviewed include structural integrity, floating gate scaling, floating gate replacement, noise and variation. Future trends are discussed.
  • Keywords
    nanoelectronics; random-access storage; floating gate replacement; floating gate scaling; nonvolatile memory scaling; Charge transfer; Degradation; Dielectrics; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Space charge; Stress; Threshold voltage; 30nm; floating gate elimination; mechanical stress; noise; non-volatile memory; scaling; variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290561
  • Filename
    4290561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3273630