Title :
A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s Programming Speed
Author :
Mihara, M. ; Kawajiri, Y. ; Kobayashi, K. ; Ogura, T. ; Shukuri, S. ; Ajika, N. ; Nakashima, M.
Author_Institution :
Genusion Inc., Hyogo
Abstract :
A 1.8V 4 Mb floating-gate flash test chip utilizing back bias assisted band-to-band tunneling induced hot electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double source line architecture (DSLA) and selective verifying method (SVM), applied to NOR arrayed B4-Flash enables to achieve 100 MB/s programming speed. The MLC capability of B4-Flash memory is also shown by realizing three levels of programmed Vth distribution with 0.8V width.
Keywords :
NOR circuits; flash memories; hot carriers; DSLA; SVM; back bias assisted band-to-band tunneling; double source line architecture; floating-gate NOR type B4-flash test chip; hot electron injection mechanism; selective verifying method; storage capacity 4 Mbit; voltage 1.8 V; Electrons; Flash memory; Logic programming; Mechanical factors; Nonvolatile memory; Pulse inverters; Support vector machines; Testing; Tunneling; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290565
