• DocumentCode
    3273693
  • Title

    A 1.8V 4Mb Floating-Gate NOR Type B4-Flash Test Chip for 100MB/s Programming Speed

  • Author

    Mihara, M. ; Kawajiri, Y. ; Kobayashi, K. ; Ogura, T. ; Shukuri, S. ; Ajika, N. ; Nakashima, M.

  • Author_Institution
    Genusion Inc., Hyogo
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    A 1.8V 4 Mb floating-gate flash test chip utilizing back bias assisted band-to-band tunneling induced hot electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double source line architecture (DSLA) and selective verifying method (SVM), applied to NOR arrayed B4-Flash enables to achieve 100 MB/s programming speed. The MLC capability of B4-Flash memory is also shown by realizing three levels of programmed Vth distribution with 0.8V width.
  • Keywords
    NOR circuits; flash memories; hot carriers; DSLA; SVM; back bias assisted band-to-band tunneling; double source line architecture; floating-gate NOR type B4-flash test chip; hot electron injection mechanism; selective verifying method; storage capacity 4 Mbit; voltage 1.8 V; Electrons; Flash memory; Logic programming; Mechanical factors; Nonvolatile memory; Pulse inverters; Support vector machines; Testing; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290565
  • Filename
    4290565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3273693