Title :
Improved Reliability of a High-k IPD Flash Cell through use of a Top-oxide
Author :
Power, John R. ; Gong, Y. ; Tempel, G. ; Andersen, E.O. ; Langheinrich, W. ; Shum, D. ; Strenz, R. ; Pescini, L. ; Kakoschke, Ronald ; van der Zanden, K. ; Allinger, R.
Author_Institution :
Infineon Technol. Dresden GmbH & Co. OHG Dresden, Dresden
Abstract :
We report Flash cell write/erase and reliability data from a 2Mb demonstrator processed using a 0.13 mum based eFlash technology comprising the high-k material, aluminum oxide (Al2O3) within the inter-poly dielectric (IPD) layer. With bottom and top-oxides (SiO2) completing the OAO IPD stack, producing an EOT of 9.5 nm, a 2.0 V improvement in programming voltage over a Flash cell with a conventional ONO IPD is obtained. Retention studies reveal both the important role of the top-oxide, and, at elevated temperature, the robustness of the OAO construction.
Keywords :
alumina; dielectric materials; flash memories; high-k dielectric thin films; integrated circuit reliability; silicon compounds; Al2O3; EOT production; OAO IPD stack; SiO2; aluminum oxide; eflash technology; flash cell write-erase data; high-k inter-polydielectric layered flash cell reliability; retention studies; size 0.13 mum; size 9.5 nm; top-oxide role; voltage 2 V; Aluminum oxide; Annealing; Atomic layer deposition; Displays; High K dielectric materials; High-K gate dielectrics; Materials reliability; Robustness; Temperature; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290567
