DocumentCode :
3273760
Title :
Floating Gate B4-Flash Memory Technology Utilizing Novel Programming Scheme - Highly Scalable, Efficient and Temperature Independent Programming -
Author :
Shukuri, S. ; Ajika, N. ; Mihara, M. ; Kawajiri, Y. ; Ogura, T. ; Kobayashi, K. ; Endoh, T. ; Nakashima, M.
Author_Institution :
GENUSION Inc., Hyogo
fYear :
2007
fDate :
26-30 Aug. 2007
Firstpage :
30
Lastpage :
31
Abstract :
This paper demonstrates that B4-HE injection programming scheme can be easily evolved to a floating gate cell. By applying a moderate back bias to the cell during programming, the bit-line voltage can be reduced below the supply voltage, 1.8 V. As a result, B4-flash can achieves high speed programming comparable to conventional NOR and high programming efficiency comparable to NAND flash at the same time. Basic operations of the floating gate B4-flash cells have been investigated. It is also confirmed that B4-HE injection programming provides very weak temperature dependency in comparison with CHE and FN injection, and does not have a negative impact to its reliability.
Keywords :
flash memories; hot carriers; B4-HE injection programming scheme; B4-flash; back bias; floating gate B4-flash memory technology; temperature independent programming; Channel hot electron injection; Flash memory; Flash memory cells; Helium; Nonvolatile memory; SONOS devices; Temperature dependence; Throughput; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
Type :
conf
DOI :
10.1109/NVSMW.2007.4290568
Filename :
4290568
Link To Document :
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