DocumentCode :
3273781
Title :
A Novel Flash-based FPGA Technology with Deep Trench Isolation
Author :
Kyung JoonHan ; Chan, N. ; SungRae Kim ; Ben Leung ; Hecht, V. ; Cronquist, B.
Author_Institution :
Actel Corp., Mountain View
fYear :
2007
fDate :
26-30 Aug. 2007
Firstpage :
32
Lastpage :
33
Abstract :
A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) array operation. The IPW FPGA array operation requires less than + 10 V during Uniform Channel FN-FN programming and shows negligible gate disturb. Additionally, it eliminates Gate-Induced Drain Leakage (GIDL) during programming. Characterization of a FPGA cell and array with 90 nm design rules is demonstrated with excellent electrical characteristics.
Keywords :
field programmable gate arrays; flash memories; isolation technology; IPW FPGA array operation; Independent Pwell array operation; deep trench isolation; electrical characteristics; field programmable gate arrays; gate-induced drain leakage; novel flash-based FPGA technology; size 90 nm; uniform channel FN-FN programming; Diffusion tensor imaging; Electric variables; Etching; Field programmable gate arrays; Isolation technology; Logic devices; Logic programming; Nonvolatile memory; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
Type :
conf
DOI :
10.1109/NVSMW.2007.4290569
Filename :
4290569
Link To Document :
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