• DocumentCode
    3273781
  • Title

    A Novel Flash-based FPGA Technology with Deep Trench Isolation

  • Author

    Kyung JoonHan ; Chan, N. ; SungRae Kim ; Ben Leung ; Hecht, V. ; Cronquist, B.

  • Author_Institution
    Actel Corp., Mountain View
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    32
  • Lastpage
    33
  • Abstract
    A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) array operation. The IPW FPGA array operation requires less than + 10 V during Uniform Channel FN-FN programming and shows negligible gate disturb. Additionally, it eliminates Gate-Induced Drain Leakage (GIDL) during programming. Characterization of a FPGA cell and array with 90 nm design rules is demonstrated with excellent electrical characteristics.
  • Keywords
    field programmable gate arrays; flash memories; isolation technology; IPW FPGA array operation; Independent Pwell array operation; deep trench isolation; electrical characteristics; field programmable gate arrays; gate-induced drain leakage; novel flash-based FPGA technology; size 90 nm; uniform channel FN-FN programming; Diffusion tensor imaging; Electric variables; Etching; Field programmable gate arrays; Isolation technology; Logic devices; Logic programming; Nonvolatile memory; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290569
  • Filename
    4290569