DocumentCode
327381
Title
Anomalous dielectric dispersion in tantalum oxide films prepared by RF sputtering
Author
Miyairi, K.
Author_Institution
Fac. of Eng., Shinshu Univ., Nagano, Japan
fYear
1998
fDate
22-25 Jun 1998
Firstpage
233
Lastpage
236
Abstract
Dielectric properties (ε and tan δ) of thin sputtered tantalum oxide films have been measured in the low frequency range. Anomalous large values of ε and tan δ have been observed at high temperatures above 100°C. The explicit thickness dependence exists in the frequency dependence of ε and tan δ. These results have been interpreted by Maxwell-Wagner theory
Keywords
dielectric losses; dielectric thin films; permittivity; sputtered coatings; tantalum compounds; Maxwell-Wagner theory; RF sputtering; Ta2O5; dielectric dispersion; dielectric properties; loss angle; permittivity; tantalum oxide film; Aging; Dielectric measurements; Dielectric substrates; Ovens; Polarization; Radio frequency; Space charge; Sputtering; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location
Vasteras
Print_ISBN
0-7803-4237-2
Type
conf
DOI
10.1109/ICSD.1998.709268
Filename
709268
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