• DocumentCode
    3273871
  • Title

    Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

  • Author

    Gerardi, C. ; Lombardo, S. ; Cina, G. ; Tripiciano, E. ; Corso, D. ; Ancarani, V. ; Lacono, G. ; Bongiorno, C. ; Garozzo, C. ; Barbera, P. ; Costa, G.A. ; Coccorese, C. ; Vecchio, M. ; Rimini, E. ; Melanotte, M.

  • Author_Institution
    STMicroelectron., Catania
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.
  • Keywords
    MOSFET; elemental semiconductors; flash memories; integrated circuit reliability; nanoelectronics; silicon; Si; flash memory cells; high speed performance; low aspect ratio nano floating gate FinFET memories; nanocrystals; Dielectrics; FinFETs; Flash memory; Interference; Manufacturing; Nanocrystals; Nanoscale devices; Nonvolatile memory; Robustness; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290574
  • Filename
    4290574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3273871