Title :
Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability
Author :
Gerardi, C. ; Lombardo, S. ; Cina, G. ; Tripiciano, E. ; Corso, D. ; Ancarani, V. ; Lacono, G. ; Bongiorno, C. ; Garozzo, C. ; Barbera, P. ; Costa, G.A. ; Coccorese, C. ; Vecchio, M. ; Rimini, E. ; Melanotte, M.
Author_Institution :
STMicroelectron., Catania
Abstract :
In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.
Keywords :
MOSFET; elemental semiconductors; flash memories; integrated circuit reliability; nanoelectronics; silicon; Si; flash memory cells; high speed performance; low aspect ratio nano floating gate FinFET memories; nanocrystals; Dielectrics; FinFETs; Flash memory; Interference; Manufacturing; Nanocrystals; Nanoscale devices; Nonvolatile memory; Robustness; Stress;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290574
