Title :
Air-Gap Application and Simulation Results for Low Capacitance in 60nm NAND Flash Memory
Author :
Kim, Sukjoong ; Cho, Wheewon ; Kim, Junggeun ; Lee, Byungseok ; Park, SungKi
Author_Institution :
Hynix Semicond. Inc., Kyoungki-do
Abstract :
In IMD study Rs reduction and better uniformity as well as lower capacitance were achieved in 60 nm 2 Giga Bit NAND flash memory. It alos fabricated 70 % air-gap of gate and calculated interference reduction in 45 nm device when it was applied throughout simulation. It is sure that we should apply this air-gap process to future device in order to meet device property of cell Vt shift and capacitance.
Keywords :
NAND circuits; flash memories; logic gates; In IMD study Rs reduction and better uniformity as well as lower capacitance were achieved in 60 nm 2 Giga Bit NAND Flash Memory. We fabricated 70 % air-gap of gate and calculated interference reduction in 45 nm device when it was applied throughout simulation. We are sure that we should apply this air-gap process to future device in order to meet device property of cell Vt shift and capacitance; NAND flash memory; air-gap application; interference reduction; low capacitance; size 45 nm; size 60 nm; Air gaps; Capacitance measurement; Dielectric constant; Dielectric materials; Dielectric measurements; Electric variables measurement; Interference; Research and development; Sputtering; Tungsten;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290578
