Title :
Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current
Author :
Lin, Y.Y. ; Lv, H.B. ; Zhou, P. ; Yin, M. ; Liao, F.F. ; Cai, Y.F. ; Tang, T.A. ; Feng, J. ; Zhang, Y. ; Zhang, Z.F. ; Qiao, B.W. ; Lai, Y.F. ; Cai, B.C. ; Chen, B.
Author_Institution :
Fudan Univ., Shanghai
Abstract :
Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorphous Si-rich regions surrounding the phase change crystalline in SST. It shows a good promise for non-volatile memory applications.
Keywords :
amorphous state; antimony alloys; composite materials; nanostructured materials; phase change materials; random-access storage; semiconductor materials; silicon alloys; tellurium alloys; thermal stability; RESET current; SiSbTe; amorphous silicon-rich regions; composite film; data retention; lower operation current; nanocrystalline phase change memory; nonvolatile phase change memory application; self-confine mechanisms; self-heat mechanisms; thermal stability; Conductivity; Crystallization; Nonvolatile memory; Phase change materials; Phase change memory; Semiconductor films; Temperature; Thermal resistance; Thermal stability; Thermal stresses; Phase change memroy; RESET current; SST; self-confine; self-heat; thermal stability;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290581
