Title :
Investigation of Reliability Characteristics of Si Nanocrystal NOR Memory Arrays
Author :
Jacob, S. ; Perniola, L. ; Festes, G. ; Bodnar, S. ; Coppard, R. ; Thiery, J.F. ; Pedron, T. ; Jalaguier, E. ; Boulanger, F. ; De Salvo, B. ; Deleonibus, S.
Author_Institution :
ATMEL Rousset, Rousset
Abstract :
In this work, data of a 32Mb Si-NC NOR flash memory product, fabricated in a 130nm ATMEL technology platform have been presented. Measurements have shown an average threshold voltage shift of 3V, without extrinsic bits even after cycling and data retention at 150degC. An in-depth study of gate disturb has been performed, focusing on the influence of the HTO thickness.
Keywords :
NOR circuits; flash memories; logic gates; nanoelectronics; silicon; ATMEL technology platform; HTO thickness; Si nanocrystal NOR memory arrays; reliability characteristics; Dielectrics; Electrons; Flash memory; Jacobian matrices; Nanocrystals; Nonvolatile memory; Predictive models; Robustness; Silicon; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290585
