Title :
Reliability Study of Split Gate Silicon Nanocrystal Flash EEPROM
Author :
Hong, Cheong Min ; Yater, Jane ; Kang, Sung-Taeg ; Gasquet, Horacio ; Chindalore, Gowrishankar
Author_Institution :
Freescale Semicond., Austin
Abstract :
In this paper, we present a measurement based on biased data retention to determine the direction of charge loss. Top oxide and bottom oxide thickness can be optimized to meet long term reliability goal. A split gate nanocrystal nonvolatile memory with large program window, while demonstrating excellent data retention and program disturb characteristics is also presented.
Keywords :
flash memories; nanoelectronics; random-access storage; semiconductor device reliability; silicon; Si; biased data retention; nonvolatile memory; reliability study; split gate silicon nanocrystal flash EEPROM; Acceleration; EPROM; Nanocrystals; Nonvolatile memory; Robustness; Silicon; Split gate flash memory cells; Temperature; Thickness control; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290587
