Title :
Optimization of 90nm Split Gate Nanocrystal Non-Volatile Memory
Author :
Yater, Jane A. ; Kang, S.-T. ; Steimle, R. ; Hong, C.M. ; Winstead, B. ; Herrick, M. ; Chindalore, G.
Author_Institution :
Freescale Semicond., Austin
Abstract :
A 90 nm split gate nanocrystal bitcell has been demonstrated with scaled select gate oxide and adjustable control gate threshold voltage that allows for fast, low power SSI operation and top erase. This bitcell performance is excellent and holds promise for embedded flash applications.
Keywords :
flash memories; random-access storage; SSI operation; bitcell performance; embedded flash applications; optimization; scaled select gate oxide; size 90 nm; split gate nanocrystal nonvolatile memory; Breakdown voltage; CMOS technology; Character generation; Electron traps; Etching; Human computer interaction; Implants; Nanocrystals; Nonvolatile memory; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290588
