• DocumentCode
    3274150
  • Title

    A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory

  • Author

    Chang, Y.W. ; Wu, G.W. ; Chen, P.C. ; Chen, C.H. ; Yang, I.C. ; Chin, C.Y. ; Huang, I.J. ; Tsai, W.J. ; Lu, T.C. ; Lu, W.P. ; Chen, K.C. ; Lu, C.Y.

  • Author_Institution
    Technol. Dev. Center Ltd., Hsinchu
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.
  • Keywords
    flash memories; integrated circuit noise; interference; nanoelectronics; floating-gate flash memory; interference phenomenon; nitride-based flash memory; Analytical models; Dielectrics; Electric potential; Electrons; Flash memory; Flash memory cells; Interference; Monitoring; Nonvolatile memory; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290590
  • Filename
    4290590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274150