Author :
Okuyama, Yutaka ; Furukawa, Tomoyasu ; Saito, Tomohiro ; Nonaka, Yusuke ; Ishimaru, Tetsuya ; Yasui, Kan ; Hisamoto, Digh ; Shimamoto, Yasuhiro ; Kimura, Shin´ichiro ; Mizuno, Makoto ; Toba, Koichi ; Okada, Daisuke ; Hashimoto, Takashi ; Okuyama, Kousuke
Abstract :
Lateral charge distribution in nitride of split-gate type semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memories has been determined by well-controlled experimental devices in which nanometer-size nitride piece was located at various positions for monitoring trapped charge. We found that electron distribution is created by two different hot-electron-injection mechanisms. Based on this new finding, the way to improve the matching of electron and hole distributions is investigated.
Keywords :
charge injection; electron traps; semiconductor storage; electron distribution; hole distribution; hot-electron-injection mechanism; lateral charge distributions; nanometer-size nitride; semiconductor-oxide-nitride-oxide-semiconductor; split-gate SONOS memories; trapped charges monitoring; Character generation; Charge carrier processes; Current measurement; Electron traps; Laboratories; Monitoring; Nanoscale devices; SONOS devices; Split gate flash memory cells; Threshold voltage;
