Determination of Lateral Charge Distributions of Split-gate SONOS Memories Using Experimental Devices with Nanometer-size Nitride Piece

Author

Okuyama, Yutaka ; Furukawa, Tomoyasu ; Saito, Tomohiro ; Nonaka, Yusuke ; Ishimaru, Tetsuya ; Yasui, Kan ; Hisamoto, Digh ; Shimamoto, Yasuhiro ; Kimura, Shin´ichiro ; Mizuno, Makoto ; Toba, Koichi ; Okada, Daisuke ; Hashimoto, Takashi ; Okuyama, Kousuke

Author_Institution

Hitachi Ltd., Tokyo

fYear

2007

fDate

26-30 Aug. 2007

Firstpage

85

Lastpage

87

Abstract

Lateral charge distribution in nitride of split-gate type semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memories has been determined by well-controlled experimental devices in which nanometer-size nitride piece was located at various positions for monitoring trapped charge. We found that electron distribution is created by two different hot-electron-injection mechanisms. Based on this new finding, the way to improve the matching of electron and hole distributions is investigated.

Keywords

charge injection; electron traps; semiconductor storage; electron distribution; hole distribution; hot-electron-injection mechanism; lateral charge distributions; nanometer-size nitride; semiconductor-oxide-nitride-oxide-semiconductor; split-gate SONOS memories; trapped charges monitoring; Character generation; Charge carrier processes; Current measurement; Electron traps; Laboratories; Monitoring; Nanoscale devices; SONOS devices; Split gate flash memory cells; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0753-2

Electronic_ISBN

1-4244-0753-2

Type

conf

DOI

10.1109/NVSMW.2007.4290592

Filename

4290592