Title :
Nitride Trapping Memory Technology to Realize Flash-Embedded SoC of 65nm and Beyond
Author :
Takahashi, Nobuyoshi ; Arai, Masatoshi ; Takahashi, Keita ; Kawashima, Koichi ; Moriyama, Yoshiya ; Kurihara, Kiyoshi ; Matsuo, Ichiro
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Kyoto
Abstract :
Nitride trapping memory technology to realize flash-embedded SoC of 65nm and beyond has been demonstrated for the first time. The device of 0.024 mum2/bit has been fabricated with advanced SoC process, comprising NiSi-salicidation, ultra shallow junction, fine planarization, WL gap-filling and highly reliable Cu/FSG interconnect with very narrow pitch. In-process charging damage has been eliminated by newly developed FEOL-level protection diode.
Keywords :
embedded systems; flash memories; nanotechnology; nitrogen compounds; silicon; system-on-chip; embedded systems; flash-embedded SoC; nanofabrication; nitride trapping memory technology; silicon; Annealing; Dielectric substrates; Diodes; Integrated circuit interconnections; Planarization; Protection; Random access memory; Scalability; Temperature; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290594
