DocumentCode :
3274272
Title :
A Consistent Model for the SANOS Programming Operation
Author :
Furnemont, A. ; Rosmeulen, M. ; Cacciato, A. ; Breuil, L. ; De Meyer, K. ; Maes, H. ; Van Houdt, J.
Author_Institution :
IMEC, Leuven
fYear :
2007
fDate :
26-30 Aug. 2007
Firstpage :
96
Lastpage :
97
Abstract :
An accurate model for the SANOS programming operation has been developed. Excellent agreement between measurements and simulations in a large range of voltages and times is obtained, taking leakage through the gate stack and Frenkel-Poole detrapping into account. The model is exploited to predict the impact of the programming conditions on the retention behavior.
Keywords :
flash memories; Frenkel-Poole detrapping; SANOS programming operation; SiO2-SiN-Al2O3; flash memories; gate stack; Current measurement; Electron traps; Electronic mail; Flash memory; Genetic programming; Predictive models; Temperature measurement; Temperature sensors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
Type :
conf
DOI :
10.1109/NVSMW.2007.4290597
Filename :
4290597
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3274272
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