Title :
Improved Bake Retention Characteristic of Recessed Charge Trap Flash (RCTF)
Author :
Lee, Se Hoon ; Lee, Jong Jin ; Jang, Donghoon ; Choe, Jeong-Dong ; Kim, Taeyong ; Cho, Eun Suk ; Park, Se Joon ; Ahn, Young Joon ; Hwang, Won ; Kim, Woo-Jung ; Yoon, Young-Bae ; Park, Kyucharn
Author_Institution :
Samsung Electron. Co. LTD., Yongin
Abstract :
In this work we suggest recessed charge trap flash (RCTF) memory, which can avoid using a physical etch process to separate the charge trapping layer along the word line direction. The characterization of RCTF was carried out focusing on retention reliability and the effect of lateral charge redistribution.
Keywords :
CMOS memory circuits; etching; flash memories; RCTF memory; bake retention reliability; charge trapping layer; lateral charge redistribution; physical etch process; recessed charge trap flash memory; Aluminum oxide; Dielectrics; Electron traps; Electronic mail; Etching; FinFETs; Research and development; SONOS devices; Silicon compounds; Transistors;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290599
