• DocumentCode
    3274298
  • Title

    Improved Bake Retention Characteristic of Recessed Charge Trap Flash (RCTF)

  • Author

    Lee, Se Hoon ; Lee, Jong Jin ; Jang, Donghoon ; Choe, Jeong-Dong ; Kim, Taeyong ; Cho, Eun Suk ; Park, Se Joon ; Ahn, Young Joon ; Hwang, Won ; Kim, Woo-Jung ; Yoon, Young-Bae ; Park, Kyucharn

  • Author_Institution
    Samsung Electron. Co. LTD., Yongin
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    101
  • Lastpage
    102
  • Abstract
    In this work we suggest recessed charge trap flash (RCTF) memory, which can avoid using a physical etch process to separate the charge trapping layer along the word line direction. The characterization of RCTF was carried out focusing on retention reliability and the effect of lateral charge redistribution.
  • Keywords
    CMOS memory circuits; etching; flash memories; RCTF memory; bake retention reliability; charge trapping layer; lateral charge redistribution; physical etch process; recessed charge trap flash memory; Aluminum oxide; Dielectrics; Electron traps; Electronic mail; Etching; FinFETs; Research and development; SONOS devices; Silicon compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290599
  • Filename
    4290599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274298