DocumentCode :
3274303
Title :
Low Voltage High Speed Programming/Erasing Charge Trapping Memory with Metal-Al2O3-SiN-Si3N4-Si Structure
Author :
Shim, Sun Il ; Yeh, Frank C. ; Wang, X.W. ; Ma, T.P.
Author_Institution :
Yale Univ., New Haven
fYear :
2007
fDate :
26-30 Aug. 2007
Firstpage :
103
Lastpage :
105
Abstract :
SONOS-type NAND flash memory cell with metal-Al2O3-SiN-Si3N4-Si was fabricated and key characteristics were investigated. Low voltage and high-speed programming/erasing characteristics were achieved, due to low barrier height of Si3N4 and high dielectric constant of Al2O3 compared with those of SiO2. It also showed good endurance up to 10 k cycles, and more than 1.5 V memory windows after 10 years.
Keywords :
NAND circuits; aluminium compounds; flash memories; low-power electronics; metals; permittivity; silicon; silicon compounds; Al2O3SiNSi3N4Si; SONOS-type NAND flash memory cell; charge trapping memory erasing; dielectric constant; high speed programming-erasing; metal; Aluminum oxide; Capacitance-voltage characteristics; Electrodes; Gold; High K dielectric materials; High-K gate dielectrics; Hysteresis; Leakage current; Low voltage; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
Type :
conf
DOI :
10.1109/NVSMW.2007.4290600
Filename :
4290600
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3274303
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