Novel Application of Monte Carlo Simulations for Improved Understanding of Transient Programming in SONOS Devices

A good understanding of programming transient of SONOS-type memory devices is essential to achieve better scaling and improve the reliability of these devices. We have developed a novel approach to apply Monte Carlo simulations that reduces the computational time required for such a study significantly. The new scheme was applied to understand the programming of MirroBit^tm devices. The results show that channel initiated secondary electrons play a significant role in programming of SONOS-type devices. The results also explain the mechanism that allows electrons to be trapped in front of the drain junction during programming. Our simulation results show a good match to experimental data.