DocumentCode :
3274454
Title :
Deep Reactive Ion Etching based silicon micromachined components at terahertz frequencies for space applications
Author :
Chattopadhyay, Goutam ; Ward, John S. ; Manohara, Harish ; Toda, Risaku
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
Jet Propulsion Laboratory (JPL) is using deep reactive ion etching (DRIE) based silicon micromachining capabilities to develop the critical waveguide components at submillimeter wavelengths that will lead to highly integrated multi-pixel spectrometers, imagers, and radars. In this paper we describe the design and fabrication of silicon micromachined critical waveguide components operating in the 325-500 GHz frequency band for space applications. We also address the challenges of testing these devices when interfaced with metal waveguide test fixtures.
Keywords :
astronomical instruments; elemental semiconductors; micromachining; silicon; sputter etching; submillimetre wave devices; waveguides; Si; critical waveguide components; deep reactive ion etching; frequency 325 GHz to 500 GHz; imagers; integrated multipixel spectrometers; metal waveguide test fixtures; radars; silicon micromachining; space applications; Airborne radar; Etching; Frequency; Laboratories; Micromachining; Propulsion; Silicon; Spectroscopy; Testing; Waveguide components;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665514
Filename :
4665514
Link To Document :
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