DocumentCode
3274814
Title
International Electron Devices Meeting. Technical Digest [Front Matter and Table of Contents]
fYear
1996
fDate
8-11 Dec. 1996
Abstract
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.
Keywords
integrated circuit modelling; integrated circuit technology; integrated memory circuits; micromechanical devices; monolithic integrated circuits; power electronics; reliability; semiconductor device models; semiconductor devices; semiconductor technology; sensors; vacuum microelectronics; CMOS device reliability; DRAM technology; HBTs; HEMTs; MESFETs; RF power devices; SOI; SRAM technology; compact modelling; detectors; dielectric technology; high-speed CMOS; hot carrier effects; image sensors; interconnect technology; lasers; microelectromechanical devices; nonvolatile memory technology; quantum devices; smartpower devices; solid state devices; vacuum microelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553027
Filename
553027
Link To Document