DocumentCode
3274854
Title
Room temperature generation of terahertz radiation from dual grating gate HEMT’s
Author
Meziani, Y.M. ; Nishimura, T. ; Handa, H. ; Knap, W. ; Otsuji, T. ; Sano, E. ; Popov, V.V. ; Coquillat, D. ; Teppe, F.
Author_Institution
RIEC, Tohoku Univ., Sendai
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
We report on room temperature generation of the terahertz radiation from dual grating gate high electron mobility transistor. The emission spectra were measured using Fast Fourier Spectroscopy. Both coherent and incoherent excitation of the plasmons can give rise to the broadband emission in the present device.
Keywords
high electron mobility transistors; luminescence; plasmons; submillimetre waves; broadband emission; dual grating gate; emission spectra; fast Fourier spectroscopy; high electron mobility transistor; plasmons; room temperature; temperature 293 K to 298 K; terahertz radiation; Electrons; Gallium arsenide; Gratings; HEMTs; MODFETs; Plasma temperature; Plasma waves; Plasmons; Resonant frequency; Solid state circuits; Emission of terahertz radiations; HEMT; grating gates device; plasma waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665540
Filename
4665540
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