DocumentCode :
3274984
Title :
Components for a GaAs delta-sigma modulator oversampled analog-to-digital converter
Author :
Chan, K.T. ; Martin, K.W.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
3
fYear :
1992
fDate :
10-13 May 1992
Firstpage :
1300
Abstract :
The authors examine the design issues, alternatives, and problems of a GaAs delta-sigma modulator. Components for a delta-sigma modulator are designed and fabricated in a depletion-mode GaAs MESFET technology. They are individually characterized and are integrated together into a second-order delta-sigma modulator. Valuable design principles are recommended for future GaAs delta-sigma modulators. Although it did not meet its initial goals, the first attempt demonstrates the modulator´s noise shaping ability, which enables it to perform beyond the precision of the individual GaAs components. The modulator achieved 9-10-b performance for a 200-MHz sampling rate and 2-MHz output word rate. Components such as the comparator and 1-b DAC (digital-to-analog converter) limited the performance of the modulator. Nevertheless, corrections and improvements were identified for future GaAs delta-sigma modulator components
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue-digital conversion; delta modulation; field effect integrated circuits; gallium arsenide; modulators; 2 MHz; 200 MHz; DAC; GaAs; MESFET technology; comparator; delta-sigma modulator; depletion-mode; noise shaping ability; oversampled ADC; second-order; Analog-digital conversion; Bandwidth; Baseband; Delta modulation; Dynamic range; Filters; Gallium arsenide; MESFETs; Noise shaping; Quantization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
Type :
conf
DOI :
10.1109/ISCAS.1992.230266
Filename :
230266
Link To Document :
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